NONLINEAR CARRIER DYNAMICS IN GAXIN1-XASYP1-Y COMPOUNDS

被引：79

作者：

WINTNER, E ^{[1
]}

IPPEN, EP ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1001

页数：3

共 22 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] AGRAWAL GP, 1983, ELECTRON LETT, V19, P975
[3] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS
ASADA, M
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 917 - 923
[4] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[5] AUGER RECOMBINATION IN INGAASP
HAUG, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 512 - 514
[6] THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS
HENRY, CH
LOGAN, RA
MERRITT, FR
LUONGO, JP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 947 - 952
[7] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[8] EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP-INP LASERS - SPECTROSCOPY OF A SHORT WAVELENGTH EMISSION
MOZER, A
ROMANEK, KM
SCHMID, W
PILKUHN, MH
SCHLOSSER, E
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 964 - 966
[9] MOZER A, 1983, J QUANTUM ELECTRON, V19, P913
[10] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
NAHORY, RE
POLLOCK, MA
DEWINTER, JC
[J]. ELECTRONICS LETTERS, 1979, 15 (21) : 695 - 696

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