CONTROL OF GATE LEAKAGE IN AIINAS-INSULATOR HIGFETS

被引：1

作者：

NEWSON, DJ

MERRETT, RP

LEE, M

SCOTT, EG

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 25期

关键词：

D O I：

10.1049/el:19891156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1728 / 1729

页数：2

共 6 条

[1] HIGH-PERFORMANCE INALAS/INGAAS HEMTS AND MESFETS [J].

FATHIMULLA, A ;

ABRAHAMS, J ;

LOUGHRAN, T ;

HIER, H .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :328-330

[2]

LEVINE BF, 1988, APPL PHYS LETT, V52, P1482

[3] SCHOTTKY AND FIELD-EFFECT TRANSISTOR FABRICATION ON INP AND GAINAS [J].

LOUALICHE, S ;

LHARIDON, H ;

LECORRE, A ;

LECROSNIER, D ;

SALVI, M ;

FAVENNEC, PN .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :540-542

[4] GATE CURRENT OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

RUDEN, PP ;

HAN, CJ ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1541-1546

[5] HIGH-TRANSCONDUCTANCE HETEROSTRUCTURE GA0.47IN0.53AS/INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY [J].

SCHUBERT, EF ;

TSANG, WT ;

FEUER, MD ;

MANKIEWICH, PM .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :145-147

[6]

WAKE D, 1985, IEEE ELECTRON DEV LE, V5, P626

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