FOCUSED ION-BEAM TECHNOLOGY

被引:14
作者
GAMO, K [1 ]
机构
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
关键词
D O I
10.1016/0042-207X(91)90085-W
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
There has been an increasing interest in focused ion beam processing for applications to microfabrication technology. Many high-brightness, submicron-meter focused ion beam system have already been developed. Using these focused ion beam systems, various maskless processing techniques have been developed. In these techniques, focused ion beams are irradiated by scanning them in the desired area and device patterns are formed without using lithography masks. Therefore, the process is greatly simplified. Moreover, new microfabrication processes such as total vacuum process are possible. In this paper, recent developments in focused ion beam technology will be reviewed putting emphasis on low energy focused ion beam techniques and effect of radiation damage. © 1990.
引用
收藏
页码:89 / 93
页数:5
相关论文
共 43 条
[31]   200-KV MASS-SEPARATED FINE FOCUSED ION-BEAM APPARATUS [J].
SHIOKAWA, T ;
KIM, PH ;
TOYODA, K ;
NAMBA, S ;
GAMO, K ;
AIHARA, R ;
ANAZAWA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L566-L568
[32]   30 NM LINE FABRICATION ON PMMA RESIST BY FINE FOCUSED BE ION-BEAM [J].
SHIOKAWA, T ;
AOYAGI, Y ;
KIM, PH ;
TOYODA, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04) :L232-L233
[33]  
SHUKURI S, 1986, 18TH C SOL STAT DEV, P327
[34]  
Slingerland H. N., 1986, Microelectronic Engineering, V5, P155, DOI 10.1016/0167-9317(86)90042-0
[35]   MEASUREMENT OF THE ENERGY-DISTRIBUTION OF A GALLIUM LIQUID-METAL ION-SOURCE [J].
SWANSON, LW ;
SCHWIND, GA ;
BELL, AE .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3453-3455
[36]   FABRICATION OF BALLISTIC QUANTUM WIRES AND THEIR TRANSPORT-PROPERTIES [J].
TAKAGAKI, Y ;
WAKAYA, F ;
TAKAOKA, S ;
GAMO, K ;
MURASE, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :2188-2192
[37]  
TAKAMORI A, 1984, JPN J APPL PHYS, V23, pL559
[38]   AN ALUMINUM LIQUID-METAL ION-SOURCE WITH PROLONGED LIFETIME USING A SINTERED BORIDE EMITTER [J].
TORII, Y ;
YAMADA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L444-L446
[39]   GAAS GAALAS DISTRIBUTED BRAGG REFLECTOR LASER WITH A FOCUSED ION-BEAM, LOW-DOSE DOPANT IMPLANTED GRATING [J].
WU, MC ;
BOENKE, MM ;
WANG, S ;
CLARK, WM ;
STEVENS, EH ;
UTLAUT, MW .
APPLIED PHYSICS LETTERS, 1988, 53 (04) :265-267
[40]   ION-BEAM ASSISTED DEPOSITION OF TUNGSTEN ON GAAS [J].
XU, Z ;
KOSUGI, T ;
GAMO, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01) :L23-L26