GAAS GAALAS DISTRIBUTED BRAGG REFLECTOR LASER WITH A FOCUSED ION-BEAM, LOW-DOSE DOPANT IMPLANTED GRATING

被引:7
作者
WU, MC [1 ]
BOENKE, MM [1 ]
WANG, S [1 ]
CLARK, WM [1 ]
STEVENS, EH [1 ]
UTLAUT, MW [1 ]
机构
[1] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1063/1.100142
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:265 / 267
页数:3
相关论文
共 17 条
[1]  
BOENKE MM, UNPUB
[2]  
EVANS GA, 1986, APPL PHYS LETT, V49, P315
[3]   YIELD ANALYSIS OF 2ND-ORDER DSM DFB LASERS AND IMPLICATIONS FOR DESIGN [J].
GLINSKI, J ;
MAKINO, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :849-859
[4]   FAST DIRECT E-BEAM LITHOGRAPHIC FABRICATION OF 1ST-ORDER GRATINGS FOR 1.3-MU-M DFB LASERS [J].
GOZDZ, AS ;
LIN, PSD ;
SCHERER, A ;
LEE, SF .
ELECTRONICS LETTERS, 1988, 24 (02) :123-125
[5]   DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J].
GREINER, ME ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5181-5191
[6]   MICROMACHINING OF OPTICAL STRUCTURES WITH FOCUSED ION-BEAMS [J].
HARRIOTT, LR ;
SCOTTI, RE ;
CUMMINGS, KD ;
AMBROSE, AF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :207-210
[7]   SCAN SPEED EFFECTS ON ENHANCED DISORDERING OF GAAS-ALGAAS SUPERLATTICES BY FOCUSED SI ION-BEAM IMPLANTATION [J].
ISHIDA, K ;
MATSUI, K ;
FUKUNAGA, T ;
KOBAYASHI, J ;
MORITA, T ;
MIYAUCHI, E ;
NAKASHIMA, H .
APPLIED PHYSICS LETTERS, 1987, 51 (02) :109-111
[8]   CONTINUOUS WAVE OPERATION OF A SURFACE-EMITTING ALGAAS GAAS MULTIQUANTUM WELL DISTRIBUTED BRAGG REFLECTOR LASER [J].
KOJIMA, K ;
NODA, S ;
MITSUNAGA, K ;
KYUMA, K ;
HAMANAKA, K .
APPLIED PHYSICS LETTERS, 1987, 50 (24) :1705-1707
[9]   LOW THRESHOLD OPERATION OF A GAALAS/GAAS DISTRIBUTED FEEDBACK LASER WITH DOUBLE CHANNEL PLANAR BURIED HETEROSTRUCTURE [J].
NAKANO, Y ;
TADA, K .
APPLIED PHYSICS LETTERS, 1986, 49 (18) :1145-1147
[10]   GAAS-ALXGAL-XAS INJECTION LASERS WITH DISTRIBUTED BRAGG REFLECTORS [J].
REINHART, FK ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1975, 27 (01) :45-48