200-KV MASS-SEPARATED FINE FOCUSED ION-BEAM APPARATUS

被引:13
作者
SHIOKAWA, T
KIM, PH
TOYODA, K
NAMBA, S
GAMO, K
AIHARA, R
ANAZAWA, N
机构
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] JEOL LTD,TOKYO 196,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 07期
关键词
D O I
10.1143/JJAP.24.L566
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L566 / L568
页数:3
相关论文
共 18 条
[1]  
ANAZAWA N, 1983, P SOC PHOTO-OPT INST, V393, P137, DOI 10.1117/12.935105
[2]   REDUCED DAMAGE GENERATION IN GAAS IMPLANTED WITH FOCUSED BE IONS [J].
BAMBA, Y ;
MIYAUCHI, E ;
ARIMOTO, H ;
TAKAMORI, A ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07) :L515-L517
[3]   A 100-KV ION PROBE MICROFABRICATION SYSTEM WITH A TETRODE GUN [J].
CLEAVER, JRA ;
AHMED, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1145-1148
[4]   ION-BEAM ASSISTED DEPOSITION OF METAL ORGANIC FILMS USING FOCUSED ION-BEAMS [J].
GAMO, K ;
TAKAKURA, N ;
SAMOTO, N ;
SHIMIZU, R ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05) :L293-L295
[5]   MASKLESS SUBMICROMETER PATTERN-FORMATION OF CR FILMS BY FOCUSED SB ION-IMPLANTATION [J].
GAMO, K ;
MORIIZUMI, K ;
OCHIAI, Y ;
TAKAI, M ;
NAMBA, S ;
SHIOKAWA, T ;
MINAMISONO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L642-L645
[6]  
GAMO K, 1982, 10TH P INT C EL ION
[7]  
ISHITANI T, 1981, 5TH P S ION SOURC IO, P129
[8]   FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].
KUBENA, RL ;
ANDERSON, CL ;
SELIGER, RL ;
JULLENS, RA ;
STEVENS, EH ;
LAGNADO, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :916-920
[9]   HIGH-RESOLUTION SPUTTERING USING A FOCUSED ION-BEAM [J].
KUBENA, RL ;
SELIGER, RL ;
STEVENS, EH .
THIN SOLID FILMS, 1982, 92 (1-2) :165-169
[10]   BI-LEVEL STRUCTURES FOR FOCUSED ION-BEAM USING MASKLESS ION ETCHING [J].
MATSUI, S ;
MORI, K ;
SHIOKAWA, T ;
TOYODA, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L172-L174