REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引：49

作者：

USAMI, N

MINE, T

FUKATSU, S

SHIRAKI, Y

机构：

[1] Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe/Si quantum wire structures were successfully fabricated on a V-groove patterned Si substrate by using gas-source Si molecular beam epitaxy (GS-SiMBE). A cross sectional image of transmission electron microscope clarified a crescent-shaped SiGe layer at the bottom of the V-groove owing to anisotropy of the growth rate on the different crystal orientations in GS-SiMBE.

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收藏

页码：2789 / 2791

页数：3

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