THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR

被引：53

作者：

CAPASSO, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 09期

关键词：

D O I：

10.1109/T-ED.1982.20887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1388 / 1395

页数：8

相关论文

共 29 条

[21] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[22] NAGANUMA M, 1982, I PHYS C SER, V63, P125
[23] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
PEARSALL, T
CAPASSO, F
NAHORY, RE
POLLACK, MA
CHELIKOWSKY, JR
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302
[24] IMPACT IONIZATION RATES FOR ELECTRONS AND HOLES IN GA0.47IN0.53AS
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 218 - 220
[25] THRESHOLD ENERGIES FOR IMPACT IONIZATION BY ELECTRONS AND HOLES IN INP
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 168 - 170
[26] TANTALUM DOPING AND HIGH RESISTIVITY IN ALUMINIUM ANTIMONIDE
SHAW, D
MCKELL, HD
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1963, 14 (05): : 295 - &
[27] A NEW METHOD TO CONTROL IMPACT IONIZATION RATE RATIO BY SPATIAL SEPARATION OF AVALANCHING CARRIERS IN MULTILAYERED HETEROSTRUCTURES
TANOUE, T
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 67 - 70
[28] WEBB PP, 1974, RCA REV, V35, P234
[29] WILLIAMS GF, 1982, IEEE ELECTRON DEVICE, V3, P71