ON ROLE OF SODIUM AND HYDROGEN IN SI-SIO2 SYSTEM

被引：16

作者：

KOOI, E

WHELAN, MV

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 08期

关键词：

D O I：

10.1063/1.1754765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：314 / +

页数：1

共 14 条

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[8] INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM [J].

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[9] EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE [J].

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[10] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

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