HIGH GROWTH-RATE OF III-V COMPOUNDS BY FREE-CARRIER GAS CHEMICAL BEAM EPITAXY

被引：9

作者：

BENCHIMOL, JL ^{[1
]}

JUHEL, M ^{[1
]}

PETITJEAN, M ^{[1
]}

ANCILOTTI, A ^{[1
]}

机构：

[1] RIBER SA,F-92503 RUEIL MALMAISON,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present in this article a simple and economic gas line designed for low vapor pressure metalorganic sources introduced into a chemical beam epitaxy chamber without carrier gas. This gas line was tested with triethylgallium and trimethylindium for the growth of GaAs and InP layers. The high conductance of the line allowed minimizing the heating of the source and reaching growth rate as high as 12 μm/h for GaAs. The lower InP growth rate was attributed to the higher viscosity of trimethylindium compared to triethylgallium.

引用

页码：55 / 58

页数：4

共 9 条

[1] GROWTH PARAMETER DEPENDENCE OF BACKGROUND DOPING LEVEL IN GAAS, IN0.53GA0.47AS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].