OXIDATION OF SILICON BY LOW-ENERGY OXYGEN BOMBARDMENT

被引：40

作者：

WILLIAMS, JS ^{[1
]}

PETRAVIC, M ^{[1
]}

SVENSSON, BG ^{[1
]}

CONWAY, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,S-16440 KISTA,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.357704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High resolution Rutherford backscattering and channeling has been used to study the formation of surface oxides during room temperature bombardment of silicon with oxygen in a secondary ion mass spectrometry system. Stoichiometric SiO2 is formed at angles of incidence (to the surface normal) less-than-or-equal-to 25-degrees and the angular dependence is adequately modeled using the PROFILE code. A linear dependence of oxide thickness on energy is obtained in the energy range 3-40 keV (per oxygen ion) and this is consistent with TRIM code calculations. The suboxide damage has also been measured and studied during annealing. Our data are consistent with a simple model of oxygen build up and formation of strong Si-O bonds during room temperature bombardment. Once a buried SiO2 layer is reached and Si bonds are saturated, oxygen can migrate in SiO2 to extend the oxide towards the surface.

引用

页码：1840 / 1846

页数：7

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