TRANSIENT NUCLEATION FOLLOWING PULSED-LASER MELTING OF THIN SILICON FILMS

被引：86

作者：

STIFFLER, SR

THOMPSON, MO

PEERCY, PS

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9851

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin Si films on thermally grown SiO2 layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly (> 10(9) K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO2 layers. For quenches below approximately 10(10) K/s the supercooling prior to nucleation was constant and approximately 500 K; however, for more rapid quenches, the supercooling increases significantly. This increase is attributed to embryo distributions that fall out of steady state during rapid quenches.

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页码：9851 / 9855

页数：5

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