TWO-DIMENSIONAL NATURE OF DIFFUSED LAYERS AND CERTAIN LIMITATIONS IN SCALING-DOWN COPLANAR STRUCTURE

被引：6

作者：

IWAI, H ^{[1
]}

TANIGUCHI, K ^{[1
]}

KONAKA, M ^{[1
]}

MAEDA, S ^{[1
]}

NISHI, Y ^{[1
]}

机构：

[1] TOSHIBA CORP,CTR RES & DEV,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：625 / 630

页数：6

相关论文

共 10 条

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2
BASSOUS, E
YU, HN
MANISCALCO, V
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737
[2] 1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY
HUNTER, WR
EPHRATH, L
GROBMAN, WD
OSBURN, CM
CROWDER, BL
CRAMER, A
LUHN, HE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 353 - 359
[3] Iwai H., 1980, International Electron Devices Meeting. Technical Digest, P235
[4] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
VANLIEROP, JG
APPELS, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120
[5] KUROSAWA K, 1981, 39TH DEV RES C SANT
[6] Matsunaga J., 1980, International Electron Devices Meeting. Technical Digest, P565
[7] NOBEL WP, 1976, IEDM TECH DIG, P582
[8] GENERATION MECHANISM OF DISLOCATIONS IN LOCAL OXIDATION OF SILICON
SHIBATA, K
TANIGUCHI, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1383 - 1387
[9] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS
SZE, SM
GIBBONS, G
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &
[10] TWO-DIMENSIONAL COMPUTER-SIMULATION MODELS FOR MOSLSI FABRICATION PROCESSES
TANIGUCHI, K
KASHIWAGI, M
IWAI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 574 - 580