GROWTH-RATE OF GAAS EPITAXIAL-FILMS GROWN BY MOCVD

被引：21

作者：

SATO, M ^{[1
]}

SUZUKI, M ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期

关键词：

D O I：

10.1149/1.2100705

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1540 / 1548

页数：9

共 19 条

[1] DENBAARS SP, 1986, J CRYST GROWTH, V76, P188
[2] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[3] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[4] A NEW METHOD FOR PREDICTION OF BINARY GAS-PHASE DIFFUSION COEFFECIENTS
FULLER, EN
SCHETTLE, PD
GIDDINGS, JC
[J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1966, 58 (05): : 19 - +
[5] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY
GILING, LJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 634 - 644
[6] DESIGN OF EPITAXIAL CVD REACTORS .1. THEORETICAL RELATIONSHIPS FOR MASS AND HEAT-TRANSFER
KLINGMAN, KJ
LEE, HH
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (03) : 670 - 678
[7] NUMERICAL-ANALYSIS OF THE TRANSPORT PHENOMENA IN MOCVD PROCESS
KUSUMOTO, Y
HAYASHI, T
KOMIYA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 620 - 625
[8] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[9] Manasevil H.M., 1968, APPL PHYS LETT, V12
[10] MIZUSHINA A, 1978, KAGAKU KOGAKU BINRAN

← 1 2 →