TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICON

[51] IMPORTANCE OF TEMPERATURE-DEPENDENT OPTICAL-PROPERTIES FOR RAMAN TEMPERATURE-MEASUREMENTS FOR SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3272 - 3276

[52] JELLISON GE, 1984, MATER RES SOC S P, V23, P153

[53] JELLISON GE, 1983, MAT RES SOC S P, V13, P35

[54] KEMMLER M, 1984, APPL PHYS LETT, V45, P159, DOI 10.1063/1.95153

[55] MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON-BEAM [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 873 - 875

[56] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976

[57] LARSEN BC, 1983, MAT RES SOC S P, V13, P43

[58] TIME-RESOLVED X-RAY-DIFFRACTION MEASUREMENT OF THE TEMPERATURE AND TEMPERATURE-GRADIENTS IN SILICON DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 282 - 284

[59] SYNCHROTRON X-RAY-DIFFRACTION STUDY OF SILICON DURING PULSED-LASER ANNEALING [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (05) : 337 - 340

[60] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3181 - 3185

[51] IMPORTANCE OF TEMPERATURE-DEPENDENT OPTICAL-PROPERTIES FOR RAMAN TEMPERATURE-MEASUREMENTS FOR SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3272 - 3276

[52] JELLISON GE, 1984, MATER RES SOC S P, V23, P153

[53] JELLISON GE, 1983, MAT RES SOC S P, V13, P35

[54] KEMMLER M, 1984, APPL PHYS LETT, V45, P159, DOI 10.1063/1.95153

[55] MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON-BEAM [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 873 - 875

[56] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976

[57] LARSEN BC, 1983, MAT RES SOC S P, V13, P43

[58] TIME-RESOLVED X-RAY-DIFFRACTION MEASUREMENT OF THE TEMPERATURE AND TEMPERATURE-GRADIENTS IN SILICON DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 282 - 284

[59] SYNCHROTRON X-RAY-DIFFRACTION STUDY OF SILICON DURING PULSED-LASER ANNEALING [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (05) : 337 - 340

[60] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3181 - 3185