IMPORTANCE OF TEMPERATURE-DEPENDENT OPTICAL-PROPERTIES FOR RAMAN TEMPERATURE-MEASUREMENTS FOR SILICON

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] Compaan A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P43

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] GAVLIN GJ, 1982, PHYS REV LETT, V48, P33

[6] GRIMSDITCH M, 1978, 14TH P INT C PHYS SE, P639

[7] TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 638 - &

[8] Hayes W., 1978, SCATTERING LIGHT CRY

[9] OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7466 - 7472

[10] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3745 - 3753

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] Compaan A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P43

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] GAVLIN GJ, 1982, PHYS REV LETT, V48, P33

[6] GRIMSDITCH M, 1978, 14TH P INT C PHYS SE, P639

[7] TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 638 - &

[8] Hayes W., 1978, SCATTERING LIGHT CRY

[9] OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7466 - 7472

[10] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3745 - 3753