EPITAXIAL COSI2/SI(111) INTERFACES

被引：8

作者：

TUNG, RT

SCHREY, F

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90061-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recent results related to the growth of high quality CoSi2 on Si(111) are described. A pre-deposition of a small amount of Co on the Si surface prior to co-deposition led to the growth of single crystal type B CoSi2 layers at room temperature. Novel domain contrast were observed by transmission electron microscopy from annealed CoSi2 films. The density and distribution of line defects in epitaxial CoSi2 layers were found to be dependent upon the topography of the original Si(111) surface. Preliminary results on structures and electronic properties at CoSi2/Si(111) interfaces are also introduced. © 1989.

引用

页码：223 / 229

页数：7

共 46 条

[41] GROWTH OF SINGLE-CRYSTAL COSI2 LAYERS AT ROOM-TEMPERATURE [J].