NEW CHARACTERIZATION METHOD OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT

被引：2

作者：

FUJISAKI, Y

TAKANO, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.338941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2910 / 2915

页数：6

共 11 条

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