HYBRID LPE/MBE-GROWN INGAASP INP DFB LASERS

被引：3

作者：

ASAHI, H

KAWAMURA, Y

NOGUCHI, Y

MATSUOKA, T

NAGAI, H

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 14期

关键词：

D O I：

10.1049/el:19830345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：507 / 509

页数：3

相关论文

共 7 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 841 - 846
[2] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION
MATSUOKA, T
NAGAI, H
ITAYA, Y
NOGUCHI, Y
SUZUKI, Y
IKEGAMI, T
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28
[3] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
NAGAI, H
NOGUCHI, Y
TAKAHEI, K
TOYOSHIMA, Y
IWANE, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220
[4] NAGAI H, UNPUB JPN J APPL PHY
[5] DEFORMATION-FREE OVERGROWTH OF INGAASP DFB CORRUGATIONS
NELSON, AW
WESTBROOK, LD
EVANS, JS
[J]. ELECTRONICS LETTERS, 1983, 19 (02) : 34 - 36
[6] 1.5 MU-M RANGE INGAASP INP DISTRIBUTED FEEDBACK LASERS
SAKAI, K
UTAKA, K
AKIBA, S
MATSUSHIMA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) : 1272 - 1278
[7] LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER
TAKAHEI, K
HAGAI, H
KAWAGUCHI, H
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 309 - 310