HIGH-QUALITY MATERIALS AND HETEROSTRUCTURES ON (111)B GAAS

被引：9

作者：

CHIN, A ^{[1
]}

MARTIN, P ^{[1
]}

DAS, U ^{[1
]}

BALLINGALL, J ^{[1
]}

YU, TH ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful growth of high-quality molecular-beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation-doped heterostructures, GaAs/InGaAs/GaAs quantum well, and AlGaAs/InGaAs multiple quantum wells (NQW) on GaAs (111)B substrates. Modulation-doped heterostructures show a 77-K mobility of 145 500 cm2/V s with a sheet density of 5.0 x 10(11) cm-2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The high material quality obtainable at low growth temperatures for (111)B growth will be advantageous for laser diode and heterostructure field-effect transistor applications. AlGaAs/InGaAs MQW on (111)B are comparable in the photoluminescence linewidths to those on (100) GaAs.

引用

页码：775 / 778

页数：4

共 11 条

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