DOPING EFFECTS IN AMORPHOUS-SILICON

被引：15

作者：

BEYER, W

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90290-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 12

页数：12

共 41 条

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[4] HIGH-TEMPERATURE KINK OF THE CONDUCTIVITY OF DOPED A-SI-H FILMS [J].

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[5] INFLUENCE OF BORON DOPING ON THE TRANSPORT-PROPERTIES OF A-SI-H FILMS [J].

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[6] THE ROLE OF HYDROGEN IN A-SI-H - RESULTS OF EVOLUTION AND ANNEALING STUDIES [J].

BEYER, W ;

WAGNER, H .

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[7] DOPING OF EVAPORATED AMORPHOUS SILICON FILMS [J].

BEYER, W .

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[8]

BEYER W, 1984, SEMICONDUCTORS SEM C, V21

[9]

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[10] THE ROLE OF HYDROGEN IN HEAVILY DOPED AMORPHOUS-SILICON [J].

CARLSON, DE ;

SMITH, RW ;

MAGEE, CW ;

ZANZUCCHI, PJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (01) :51-68

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