THERMALLY INDUCED METASTABILITY IN COMPENSATED AND DELTA-DOPED AMORPHOUS-SILICON

被引：1

作者：

HYUN, KS

LEE, C

CHANG, KJ

JANG, J

机构：

[1] KYUNG HEE UNIV,DEPT PHYS,SEOUL 130701,SOUTH KOREA

[2] KYUNG HEE UNIV,BASIC SCI RES INST,SEOUL 130701,SOUTH KOREA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 64卷 / 06期

关键词：

D O I：

10.1080/13642819108207630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the conductivity changes induced by thermal quenching in compensated hydrogenated amorphous silicon (a-Si:H) films with various compensation ratios of boron and phosphorus as well as in delta-doped a-Si:H films. The magnitude of the excess conductivity upon rapid cooling increases as the Fermi level approaches the band edges. We suggest a microscopic mechanism for generation of excess carriers by rapid cooling through dopant activation. The relaxation of the excess conductivity follows a stretched-exponential form. However, the activation energy for the relaxation time is found to be smaller than those for both undoped and singly doped a-Si:H films.

引用

页码：689 / 696

页数：8

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