CHARGE-TRAPPING MODEL OF METASTABILITY IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：21

作者：

BRANZ, HM

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7474

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7474 / 7479

页数：6

共 36 条

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