RESOLUTION OF MAJOR DEEP LEVELS IN AU-DOPED AND PT-DOPED SI

The isothermal capacitance transients (ICTS) are measured for a number of Schottky diodes of Au-doped and Pt-doped Si over the temperature range 100 to 300 K at 2 K interval. The transients are investigated, specifically to detect the two closely spaced levels of the acceptor at 0.53 eV in Au-doped Si and at 0.37 eV in Pt-doped Si. The major acceptor and donor levels observed in these diodes are analyzed by modulating function waveform analysis technique. The results obtained in Au-doped Si are in general agreement with the recent prediction of two levels observed at the acceptor energy.