ACTIVATION-ENERGY AND DISTRIBUTION FUNCTION OF THE EL2 DEFECT LEVEL IN SI-IMPLANTED GAAS

被引：7

作者：

BISBEE, JE

HALDER, NC

机构：

[1] Department of Physics, University of South Florida, Tampa

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 02期

关键词：

D O I：

10.1002/pssa.2211190217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New measurements are made of the EL2 defect level in liquid‐encapsulated‐Czochralski (LEC) grown GaAs with Si‐implantation. The isothermal capacitance transient spectroscopy (ICTS) experiment is performed to capture transient in the temperature range 200 to 380 K at 1 to 2K intervals at 1 MHz frequency for seven samples. The deep level transient spectroscopy (DLTS) signals and data analysis are carried out by modulating function waveform analysis method developed for it. These results are subsequently organized to predict the density distribution of the defect level EL2 in the energy band gap. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：545 / 553

页数：9

共 19 条

[1] CHARACTERIZATION OF IMPLANTED AND ANNEALED VAPOR-PHASE EPITAXIAL GAAS [J].