SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS OF 3C-SIC

被引：32

作者：

YOSHIDA, S

DAIMON, H

YAMANAKA, M

SAKUMA, E

MISAWA, S

ENDO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2989 / 2991

页数：3

共 10 条

[1]

Air Force Cambridge Research Laboratories (U.S.)

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[9] LIQUID-PHASE EPITAXIAL-GROWTH OF 6H-SIC BY DIPPING TECHNIQUE FOR PREPARATION OF BLUE-LIGHT-EMITTING DIODES [J].

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[10] SCHOTTKY-BARRIER DIODES ON 3C-SIC [J].

YOSHIDA, S ;

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GONDA, S .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :766-768

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