CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON

被引：15

作者：

HOLLAND, OW

NARAYAN, J

FATHY, D

WILSON, SR

机构：

[1] MOTOROLA INC, SEMICOND RES & DEV LABS, SEMICOND PROD SECT, PHOENIX, AZ 85008 USA

[2] N CAROLINA STATE UNIV, DEPT MAT ENGN, RALEIGH, NC 27695 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.336561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：905 / 909

页数：5

共 27 条

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[9]

Lischner D. J., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P759

[10] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

EBY, RE ;

WORTMAN, JJ ;

OZGUZ, V ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :957-959

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