FAR-INFRARED IMPURITY ABSORPTION IN HIGHLY DOPED ETA-TYPE SILICON

被引：29

作者：

TOYOTOMI, S ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,ROPPONGI,TOKYO,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1975年 / 38卷 / 01期

关键词：

D O I：

10.1143/JPSJ.38.175

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：175 / 180

页数：6

共 21 条

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