SUB-MICRON PATTERN REPLICATION USING A HIGH CONTRAST MASK AND 2-LAYER RESIST IN X-RAY-LITHOGRAPHY

[1] CALCULATION OF THE OPTIMUM ELECTRON-ENERGY OF A DEDICATED STORAGE RING FOR X-RAY-LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 693 - 698

[2] SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1329 - 1331

[3] MAYDAN D, 1975, IEEE T ELECTRON DEVI, V12, P426

[4] HIGH-RESOLUTION PATTERN REPLICATION USING SOFT X-RAYS [J]. ELECTRONICS LETTERS, 1972, 8 (04) : 102 - &

[5] SUGAWARA S, 1980, SPR EL SOC M ST LOUI, P680

[6] Sugiyama H., 1974, Bulletin of the Electrotechnical Laboratory, V38, P351

[7] VERY STEEP PROFILE RESIST PATTERN PREPARATION BY REACTIVE ION ETCHING WITH AR+CH4 GAS-MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L804 - L806

[8] YOSHIHARA H, 1978, JPN J APPL PHYS, V18, P2021

[1] CALCULATION OF THE OPTIMUM ELECTRON-ENERGY OF A DEDICATED STORAGE RING FOR X-RAY-LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 693 - 698

[2] SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1329 - 1331

[3] MAYDAN D, 1975, IEEE T ELECTRON DEVI, V12, P426

[4] HIGH-RESOLUTION PATTERN REPLICATION USING SOFT X-RAYS [J]. ELECTRONICS LETTERS, 1972, 8 (04) : 102 - &

[5] SUGAWARA S, 1980, SPR EL SOC M ST LOUI, P680

[6] Sugiyama H., 1974, Bulletin of the Electrotechnical Laboratory, V38, P351

[7] VERY STEEP PROFILE RESIST PATTERN PREPARATION BY REACTIVE ION ETCHING WITH AR+CH4 GAS-MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L804 - L806

[8] YOSHIHARA H, 1978, JPN J APPL PHYS, V18, P2021