INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS

被引：12

作者：

CHEN, WK

CHIN, MT

机构：

[1] Department of Electrophysics, Chiao-Tung University, Hsin-Chu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期

关键词：

ALASSB; MOCVD; THERMODYNAMICS;

D O I：

10.1143/JJAP.33.L1370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of AlAs1-xSbx have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/III ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.

引用

收藏

页码：L1370 / L1373

页数：4

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