CHARACTERIZATION OF THE INTRINSIC DOUBLE ACCEPTOR IN UNDOPED P-TYPE GALLIUM-ARSENIDE

被引:13
作者
MITCHEL, WC
BROWN, GJ
FISCHER, DW
YU, PW
LANG, JE
机构
[1] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
[2] UNIV DAYTON,DEPT COMP SCI,DAYTON,OH 45469
关键词
D O I
10.1063/1.339492
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2320 / 2328
页数:9
相关论文
共 29 条
[1]   PHOTOLUMINESCENCE AND INFRARED-SPECTROSCOPY OF ACCEPTORS IN GAAS [J].
BISHOP, SG ;
SHANABROOK, BV ;
MOORE, WJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1785-1790
[3]   EXISTENCE OF CONGRUENT-TO 64-MEV DEEP ACCEPTOR IN SE-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].
DANSAS, P ;
CHARLEC, JP .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3617-3623
[4]   INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].
ELLIOTT, KR ;
HOLMES, DE ;
CHEN, RT ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901
[5]   INTERACTION BETWEEN BORON AND INTRINSIC DEFECTS IN GAAS [J].
ELLIOTT, KR .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3856-3858
[6]   RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].
ELLIOTT, KR .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :274-276
[7]   INFRARED-ABSORPTION AND PHOTOLUMINESCENCE OF DEFECT LEVELS IN THE 204-MEV TO 255-MEV RANGE IN P-TYPE GAAS [J].
FISCHER, DW ;
YU, PW .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :1952-1955
[8]   SELECTIVE EXCITATION LUMINESCENCE AND ELECTRONIC RAMAN-SCATTERING STUDY OF THE 78-MEV ACCEPTOR IN GAAS [J].
HETZLER, SR ;
MCGILL, TC ;
HUNTER, AT .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :793-795
[9]   ACTIVATION ENERGY OF HOLES IN ZN-DOPED GAAS [J].
HILL, DE .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1815-&
[10]   EVIDENCE FOR CREATION OF GALLIUM ANTISITE DEFECT IN SURFACE REGION OF HEAT-TREATED GAAS [J].
HIRAMOTO, T ;
MOCHIZUKI, Y ;
IKOMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L830-L832