CHEMICAL VAPOR-DEPOSITION OF RUTILE FILMS

[1] ANTIPOV IV, 1967, J APPL CHEM-USSR, V40, P9

[2] THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1. [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 298 - &

[3] OXYGEN EVOLUTION ON SEMICONDUCTING TIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (02) : 199 - &

[4] BREWER L, 1953, CHEM REV, V52, P22

[5] CLARK RJH, 1973, COMPREHENSIVE INORGA, V3, P362

[6] TITANIUM-DIOXIDE DIELECTRIC FILMS PREPARED BY VAPOR REACTION [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1463 - &

[7] TIO2 FILM PROPERTIES AS A FUNCTION OF PROCESSING TEMPERATURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 735 - +

[8] ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J]. NATURE, 1972, 238 (5358) : 37 - +

[9] FUJISHIMA A, 1971, J CHEM SOC JAPAN IND, V74, P355

[10] GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1310 - +

[1] ANTIPOV IV, 1967, J APPL CHEM-USSR, V40, P9

[2] THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1. [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 298 - &

[3] OXYGEN EVOLUTION ON SEMICONDUCTING TIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (02) : 199 - &

[4] BREWER L, 1953, CHEM REV, V52, P22

[5] CLARK RJH, 1973, COMPREHENSIVE INORGA, V3, P362

[6] TITANIUM-DIOXIDE DIELECTRIC FILMS PREPARED BY VAPOR REACTION [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1463 - &

[7] TIO2 FILM PROPERTIES AS A FUNCTION OF PROCESSING TEMPERATURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 735 - +

[8] ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J]. NATURE, 1972, 238 (5358) : 37 - +

[9] FUJISHIMA A, 1971, J CHEM SOC JAPAN IND, V74, P355

[10] GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1310 - +