COHERENT PRECIPITATION OF SILICON-NITRIDE IN SILICON

被引：12

作者：

KAUSHIK, VS

DATYE, AK

KENDALL, DL

MARTINEZTOVAR, B

MYERS, DR

机构：

[1] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 21期

关键词：

D O I：

10.1063/1.99722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1782 / 1784

页数：3

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共 8 条

[1] COHERENT PRECIPITATE FORMATION IN TL IMPLANTED SI
APPLETON, BR
NARAYAN, J
WHITE, CW
WILLIAMS, JS
SHORT, KT
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 239 - 242
[2] CHARACTERIZATION OF BURIED SILICON-NITRIDE FORMED BY NITROGEN IMPLANTATION
BELZ, J
TEKAAT, EH
ZIMMER, G
VOGT, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 279 - 284
[3] MICROSTRUCTURE OF TIC PRECIPITATES IN TI-IMPLANTED ALPHA-FE
FOLLSTAEDT, DM
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1001 - 1010
[4] GOLECKI I, 1984, MATER RES SOC S P, V33, P3
[5] FORMATION OF PARTIALLY COHERENT ANTIMONY PRECIPITATES IN ION-IMPLANTED THERMALLY ANNEALED SILICON
PENNYCOOK, SJ
NARAYAN, J
HOLLAND, OW
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6875 - 6878
[6] LOCALIZED EPITAXIAL-GROWTH OF TASI2 ON (111) AND (001)SI BY RAPID THERMAL ANNEALING
WU, IC
CHU, JJ
CHEN, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 879 - 883
[7] CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY
ZIMMER, G
VOGT, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1515 - 1520
[8] LATTICE MATCH - AN APPLICATION TO HETEROEPITAXY
ZUR, A
MCGILL, TC
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 378 - 386