LOCALIZED EPITAXIAL-GROWTH OF TASI2 ON (111) AND (001)SI BY RAPID THERMAL ANNEALING

被引：10

作者：

WU, IC

CHU, JJ

CHEN, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：879 / 883

页数：5

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共 19 条

[1] CHANG CA, UNPUB
[2] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME
CHENG, HC
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 562 - 564
[3] CHIEN CJ, 1985, J APPL PHYS, V57, P1877
[4] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
CHOW, TP
STECKL, AJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497
[5] DHEURLE FM, 1986, MATER RES SOC S P, V52, P261
[6] FAN JCC, 1985, MRS P, V35, P39
[7] LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI
FUNG, MS
CHENG, HC
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1312 - 1314
[8] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142
[9] LOCALIZED EPITAXIAL-GROWTH OF HEXAGONAL AND TETRAGONAL MOSI2 ON (111) SI
LIN, WT
CHEN, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1061 - 1063
[10] LOCALIZED EPITAXIAL-GROWTH OF TETRAGONAL AND HEXAGONAL WSI2 ON (111)SI
LIN, WT
CHEN, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1515 - 1518