LOCALIZED EPITAXIAL-GROWTH OF TETRAGONAL AND HEXAGONAL WSI2 ON (111)SI

被引：26

作者：

LIN, WT ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.336308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1515 / 1518

页数：4

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