A CROSS-SECTIONAL TEM AND GLANCING ANGLE XRD STUDY OF RAPID-THERMAL-ANNEALED TA/SI MULTILAYERS

被引：5

作者：

NATAN, M ^{[1
]}

机构：

[1] MARTIN MARIETTA CORP,MARTIN MARIETTA LABS,BALTIMORE,MD 21227

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 7-8期

关键词：

HEAT TREATMENT - Annealing - MICROSCOPES; ELECTRON - Applications - TANTALUM AND ALLOYS - Vapor Deposition - X-RAYS - Diffraction;

D O I：

10.1016/0167-577X(85)90031-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid-thermal-annealed Ta/Si multilayers were characterized with cross-sectional TEM (transmission electron microscopy) glancing angle X-ray diffraction (XRD). For 10-s anneals, formation of the only silicide detected, TaSi//2, starts in the top layers and propagates to the bottom, indicating the existence of a thermal gradient. The silide shows a preferential orientation. An oxide forms on top when the surface exposed to ultrapure (0. 99999) argon is Ta, but not TaSi//2 or Si.

引用

页码：319 / 324

页数：6

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