COMPOSITE TASI2/N + POLY-SI FORMATION BY RAPID THERMAL ANNEALING

被引：17

作者：

KWONG, DL ^{[1
]}

KWOR, R ^{[1
]}

TSAUR, BY ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 135

页数：3

共 14 条

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[9] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J].

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