MODELING OF DEFECT PHOSPHORUS PAIR DIFFUSION IN PHOSPHORUS-IMPLANTED SILICON

被引：13

作者：

JAGER, HU

FEUDEL, T

ULBRICHT, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 116卷 / 02期

关键词：

D O I：

10.1002/pssa.2211160215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：571 / 581

页数：11

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