DIFFUSION OF IMPURITIES FROM IMPLANTED SILICON LAYERS BY RAPID THERMAL ANNEALING

被引：6

作者：

ALEKSANDROV, OV

KOZLOVSKII, VV

POPOV, VV

SAMORUKOV, BE

机构：

[1] Leningrad Polytechnical Inst, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 110卷 / 02期

关键词：

D O I：

10.1002/pssa.2211100243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

12

引用

收藏

页码：K61 / K65

页数：5

相关论文

共 12 条

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[6] KOZLOVSKII VV, 1987, RADIAT EFF, P744
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[10] UPHILL DIFFUSION MECHANISM IN PROTON-IRRADIATED SILICON
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