INFLUENCE OF PRECIPITATION ON PHOSPHORUS DIFFUSIVITY IN SILICON

被引：7

作者：

ANGELUCCI, R

SOLMI, S

ZINI, Q

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 02期

关键词：

D O I：

10.1002/pssa.2210960221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：541 / 546

页数：6

共 27 条

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[6] EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON [J].

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[8] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].

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HU, SM .

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[9]

FAHEY P, 1983, J APPL PHYS, V54, P6912

[10] ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS [J].

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