DAMAGE RECOVERY AND DOPANT ACTIVATION PHENOMENA IN HEAVILY ARSENIC-IMPLANTED SILICON

被引：8

作者：

CEROFOLINI, GF

MANINI, P

MEDA, L

PIGNATEL, GU

QUEIROLO, G

GARULLI, A

LANDI, E

SOLMI, S

NAVA, F

OTTAVIANI, G

GALLORINI, M

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

[2] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

[3] CNR,CTR RADIOCHEM & ACTIVAT ANAL,I-27100 PAVIA,ITALY

来源：

THIN SOLID FILMS | 1985年 / 129卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90100-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：111 / 125

页数：15

共 14 条

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