INFLUENCE OF EPITAXY ON THE LOW-TEMPERATURE SILICON DIFFUSION THROUGH GOLD LAYERS

被引：4

作者：

CROS, A ^{[1
]}

DALLAPORTA, H ^{[1
]}

OBERLIN, JC ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90266-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The diffusive properties of the junction between Si(100) surfaces and thick Au layers have been studied. Upon annealing above the Au-Si eutectic temperature, phase separation between Au and Si has been observed and the metallic layer takes an epitaxial relationship with the Si substrate. As a consequence, the Si diffusion from the interface towards the surface checked by oxidation at 250-degrees-C is decreased by more than one order of magnitude.

引用

页码：434 / 437

页数：4

共 16 条

[11] PHYSICS AND ELECTRONICS OF THE NOBLE-METAL ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION - A STATUS-REPORT [J].