GROWTH OF BORON-NITRIDE FILMS BY GAS MOLECULAR-BEAM EPITAXY

被引：7

作者：

PAISLEY, MJ

SITAR, Z

YAN, B

DAVIS, RF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：323 / 326

页数：4

共 19 条

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