HYDROGEN INJECTION AND NEUTRALIZATION OF BORON ACCEPTORS IN SILICON BOILED IN WATER

被引：68

作者：

TAVENDALE, AJ ^{[1
]}

WILLIAMS, AA ^{[1
]}

PEARTON, SJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.96476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 592

页数：3

共 18 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J].

DELEO, GG ;

FOWLER, WB .

PHYSICAL REVIEW B, 1985, 31 (10) :6861-6864

[2] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J].

HANSEN, WL ;

PEARTON, SJ ;

HALLER, EE .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608

[3] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :874-876

[4] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789

[5] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

[6] ATOMIC DEUTERIUM PASSIVATION OF BORON ACCEPTOR LEVELS IN SILICON-CRYSTALS [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :882-884

[7]

MIKKELSEN JC, 1985, APR MAT RES SOC M SA

[8] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[9] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

PANKOVE, JI ;

ZANZUCCHI, PJ ;

MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[10] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

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