ATOMIC DEUTERIUM PASSIVATION OF BORON ACCEPTOR LEVELS IN SILICON-CRYSTALS

被引：36

作者：

MIKKELSEN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：882 / 884

页数：3

共 12 条

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[3]

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[6] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J].

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[7] THE EXODIFFUSION OF HYDROGEN IN DISLOCATED CRYSTALLINE SILICON [J].

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[8] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

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[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

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[10] HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICON [J].

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