AN ACCURATE TWO-DIMENSIONAL LBIC SOLUTION FOR BIPOLAR-TRANSISTORS

被引：4

作者：

BENARAB, A ^{[1
]}

BAUDRAND, H ^{[1
]}

LESCURE, M ^{[1
]}

BOUCHER, J ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR ELECTROTECH INFORMAT & HYDRAUL TOULOUSE,EQUIPE MICROONDES,F-31071 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

D O I：

10.1016/0038-1101(88)90044-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：899 / 910

页数：12

共 21 条

[1]

AMES WF, 1969, NUMERICAL METHODS PA

[2] ACCURATE CALCULATION OF DEPLETION-LAYER PROFILE IN A PERIODIC METAL-SEMICONDUCTOR ARRAY [J].

BAUDRAND, H ;

BRITO, F ;

AHMADPANAH, M .

ELECTRONICS LETTERS, 1986, 22 (23) :1263-1265

[3] EFFECTS OF FINITE DIMENSIONS ON THE LBIC PHOTOCURRENT EXPRESSED WITH AN ANALYTICAL TWO-DIMENSIONAL SOLUTION [J].

BENARAB, A ;

BOUCHER, J ;

WAHBI, M .

SOLID-STATE ELECTRONICS, 1987, 30 (06) :667-672

[4] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].

BERZ, F ;

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445

[5] FLYING-SPOT SCANNING FOR THE SEPARATE MAPPING OF RESISTIVITY AND MINORITY-CARRIER LIFETIME IN SILICON [J].

BLEICHNER, H ;

NORDLANDER, E ;

FIEDLER, G ;

TOVE, PA .

SOLID-STATE ELECTRONICS, 1986, 29 (08) :779-786

[6]

Collin R. E., 1990, FIELD THEORY GUIDED, V5, DOI 10.1109/9780470544648

[7] INJECTION AND DOPING DEPENDENCE OF SEM AND SCANNING LIGHT SPOT DIFFUSION LENGTH MEASUREMENTS IN SILICON POWER RECTIFIERS [J].

DAVIDSON, SM ;

INNES, RM ;

LINDSAY, SM .

SOLID-STATE ELECTRONICS, 1982, 25 (04) :261-272

[8] A SCANNING-ELECTRON-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS [J].

DIMITRIADIS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1761-1765

[9] ON THE ANALYSIS OF DIFFUSION LENGTH MEASUREMENTS BY SEM [J].

DONOLATO, C .

SOLID-STATE ELECTRONICS, 1982, 25 (11) :1077-1081

[10]

HARRINGTON RF, 1968, COMPUTATION MOMENT M

← 1 2 3 →