FLYING-SPOT SCANNING FOR THE SEPARATE MAPPING OF RESISTIVITY AND MINORITY-CARRIER LIFETIME IN SILICON

被引：6

作者：

BLEICHNER, H

NORDLANDER, E

FIEDLER, G

TOVE, PA

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(86)90179-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：779 / 786

页数：8

共 8 条

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ENGSTROM, O
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[3] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1649 - &
[4] MEASUREMENT OF MINORITY-CARRIER DIFFUSION-COEFFICIENT IN SILICON BY AC PHOTO-CURRENT METHOD
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AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (02): : 276 - 280
[5] MINORITY-CARRIER LIFETIME MAPPING IN SILICON USING A MICROPROCESSOR-CONTROLLED FLYING-SPOT SCANNER
NORDLANDER, E
DRUGGE, B
TAPIA, M
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1985, 18 (01): : 65 - 68
[6] RYVKIN SM, 1964, PHOTOELECTRIC EFFECT, P11
[7] SZE SM, 1969, PHYSICS SEMICONDUCTO
[8] TAPIA M, 1983, IEEE T INSTRUM MEAS, V32, P4