MEASUREMENT OF MINORITY-CARRIER DIFFUSION-COEFFICIENT IN SILICON BY AC PHOTO-CURRENT METHOD

被引:2
作者
MOROHASHI, M
SAWAKI, N
SOMATANI, T
AKASAKI, I
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 02期
关键词
D O I
10.1143/JJAP.22.276
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:276 / 280
页数:5
相关论文
共 13 条
[1]   DIFFUSION LENGTH DETERMINATION IN P-N-JUNCTION DIODES AND SOLAR-CELLS [J].
ARORA, ND ;
CHAMBERLAIN, SG ;
ROULSTON, DJ .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :325-327
[2]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[3]   MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J].
DZIEWIOR, J ;
SILBER, D .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :170-172
[4]   DETERMINATION OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY BY LIGHT EXCITATION [J].
HU, C ;
DROWLEY, C .
SOLID-STATE ELECTRONICS, 1978, 21 (07) :965-968
[5]  
HU C, 1978, IEEE T ELECTRON DEV, V25, P822
[6]   A SEM-EBIC MINORITY-CARRIER DIFFUSION-LENGTH MEASUREMENT TECHNIQUE [J].
IOANNOU, DE ;
DIMITRIADIS, CA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :445-450
[7]   THEORY OF DIFFUSION CONSTANT RECOMBINATION, LIFETIME RECOMBINATION AND SURFACE RECOMBINATION VELOCITY - MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE [J].
KAMM, JD ;
BERNT, H .
SOLID-STATE ELECTRONICS, 1978, 21 (07) :957-964
[8]   MEASUREMENT OF MINORITY-CARRIER LIFETIME AND DIFFUSION LENGTH IN SILICON EPITAXIAL LAYERS BY MEANS OF PHOTOCURRENT TECHNIQUE [J].
MULLER, J ;
BERNT, H ;
REICHL, H .
SOLID-STATE ELECTRONICS, 1978, 21 (08) :999-1003
[9]   HOLE DRIFT VELOCITY IN SILICON [J].
OTTAVIANI, G ;
REGGIANI, L ;
CANALI, C ;
NAVA, F ;
ALBERIGIQUARANTA, A .
PHYSICAL REVIEW B, 1975, 12 (08) :3318-3329
[10]   MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GAAS AND GAAS1-XPX WITH AN INTENSITY-MODULATED ELECTRON-BEAM [J].
PIETZSCH, J .
SOLID-STATE ELECTRONICS, 1982, 25 (04) :295-&