GAAS MONOLITHIC INTEGRATED OPTICAL PREAMPLIFIER

被引：15

作者：

ARCHAMBAULT, Y ^{[1
]}

PAVLIDIS, D ^{[1
]}

GUET, JP ^{[1
]}

机构：

[1] UNIV MICHIGAN, ELECT ENGN & COMP SCI, ANN ARBOR, MI 48109 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1109/JLT.1987.1075520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 366

页数：12

共 15 条

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[3]

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[6] MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER [J].

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[7]

KOBAYASHI S, 1984, IEEE SPECTRUM MAY, P26

[8] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER [J].

KOLBAS, RM ;

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[9]

Lee C. P., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P169

[10] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].

LEE, CP ;

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ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98

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