CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF PASSIVATED III-V HETEROSTRUCTURES

被引：5

作者：

GWO, S

SMITH, AR

CHAO, KJ

SHIH, CK

SADRA, K

STREETMAN, BG

机构：

[1] UNIV TEXAS, MICROELECTR RES CTR, AUSTIN, TX 78712 USA

[2] UNIV TEXAS, DEPT ELECT & COMP ENGN, AUSTIN, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.578997

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structural and electronic properties of Al0.3Ga0.7As/GaAs heterojunction and GaAs pn junction systems are investigated by cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). The cross-sectional samples were prepared by passivating ex situ with a sulfide [(NH4)2S] solution and were transferred into an ultra-high vacuum system for STM/S studies. It is found that passivated samples are advantageous for the measurements of scanning tunneling spectroscopy. The STM/S results and the experimental details are reported.

引用

页码：2005 / 2008

页数：4

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