THERMALLY ACTIVATED PEROXY RADICAL DISSOCIATION AND ANNEALING IN VITREOUS SIO2

[1] [Anonymous], PHYS CHEM GLASSES-B

[2] Devine R. A. B., 1984, Induced Defects in Insulators, P241

[3] OXYGEN VACANCY ANNEALING IN H+ IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 953 - 957

[4] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565

[5] ISOTHERMAL ANNEALING OF E'1 DEFECTS IN ION-IMPLANTED SIO2 [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 378 - 382

[6] THE ROLE OF ACTIVATION-ENERGY DISTRIBUTIONS IN DIFFUSION RELATED ANNEALING IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 716 - 719

[7] INFLUENCE OF IONIZING-RADIATION ON PREDAMAGED, AMORPHOUS SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5162 - 5168

[8] DEVINE RAB, 1984, INDUCED DEFECTS INSU, P248

[9] THEORY OF THE PEROXY-RADICAL DEFECT IN A-SIO2 [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6649 - 6660

[10] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205

[1] [Anonymous], PHYS CHEM GLASSES-B

[2] Devine R. A. B., 1984, Induced Defects in Insulators, P241

[3] OXYGEN VACANCY ANNEALING IN H+ IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 953 - 957

[4] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565

[5] ISOTHERMAL ANNEALING OF E'1 DEFECTS IN ION-IMPLANTED SIO2 [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 378 - 382

[6] THE ROLE OF ACTIVATION-ENERGY DISTRIBUTIONS IN DIFFUSION RELATED ANNEALING IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 716 - 719

[7] INFLUENCE OF IONIZING-RADIATION ON PREDAMAGED, AMORPHOUS SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5162 - 5168

[8] DEVINE RAB, 1984, INDUCED DEFECTS INSU, P248

[9] THEORY OF THE PEROXY-RADICAL DEFECT IN A-SIO2 [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6649 - 6660

[10] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205